ZnGeP2 Our research group has long-termly focused on the research of the growth and performance optimization of Zinc Germanium Phosphide(ZnGeP2, ZGP) crystal. Through extensive study and technical innovation, lots of technical barriers in crystal growth have been overcome and the horizontal and vertical growth techniques of high quality ZnGeP2 crystal have been mastered successfully. Now we can offer ZnGep2 crystals and devices with standard sizes and orientations in mass scale and we can also supply a… ADVANTAGES ● Advanced polycrystalline synthesis technology. ● Advanced crystal growth technology: Horizontal method. ● Advanced crystal growth technology: Vertical method. ● Ultra-finesurface treatment technology. ● Precise orientation and cutting technologies. ● High Performance device production.



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Due to possessing large nonlinear coefficients(d36=75pm/V), wide infrared transparency range(0.75-12um), high thermal conductivity(0.35W/(cm ·K)), high laser damage threshold(2-5L/cm²) and well machining property, ZnGeP2 crystal was called the king of infrared nonlinear optical crystals and is still the best frequency conversion material for high power, tunable infrared laser generation.

Cryslaser can offer high optical quality ZGP crystals with extremely low absorption coefficient α<0.04/cm(at pump wavelengths 2.0-2.1um), which can caused to generate mid-infrared tunable laser with high efficiency through OPO or OPA process.

Specifications

Crystal Structure

Quartet system

Cell Parameters

a=b=54.76nm,c=107.31nm

Size

6x6x15mm 6x8x20mm
It can be customized

Phase match type

Type I or Type II

Direction deviation

≤0.5°

Absorption

≤0.05cm-1 @ 2μm

Flatness

≤λ/6 @632.8nm

Parallelism

≤10"

Perpendicularity

≤5′

Surface quality

20/10(MIL-O-13830A)

Melting point

1027℃

Density

4.18g/cm3

Microhardness

980 ± 80 kg/mm2

Moh's hardness

5.5

Band width

2.34/2.08 eV

Semiconductor type

P

Thermal conductivity

180 mW/(cm·K)

Transmission range

0.76 to 12.0μm

Nonlinear coefficient

d36=75 ± 8 pm/V